Title :
Analysis of a PIN photodiode with integrated waveguide
Author_Institution :
Siemens AG, Research Laboratories, Mÿnchen, West Germany
Abstract :
The absorption coefficient of an InGaAs PIN photodiode integrated with an InGaAsP-InP waveguide is analysed by means of the mode-matching technique. The results compare excellently to published data for ¿ = 1.3 ¿m. It is shown that by an optimised device structure the absorption coefficient can be increased to about 0.15 dB/¿m, enabling reduced detector length and smaller capacitance.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical waveguides; photodiodes; 1.3 micron; InGaAs photodiode; InGaAs-InGaAsP-InP; InGaAsP-InP waveguide; absorption coefficient; integrated waveguide; mode-matching technique; optimised device structure; reduced detector length; smaller capacitance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870633
