Title :
Two-dimensional numerical analysis of integrated bi-polar transistors
fDate :
2/1/1969 12:00:00 AM
Keywords :
Breakdown voltage; Electronic components; Epitaxial layers; Impedance; Impurities; Laboratories; Numerical analysis; P-n junctions; Semiconductor process modeling; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1969.16664
