Title :
Electron transport of (Al,Ga)Sb/InAs heterojunctions prepared by molecular beam epitaxy
Author :
Chiu, T.H. ; Tsang, W.T. ; Levi, A.F.J.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
Molecular beam epitaxial growth of (Al,Ga)Sb/InAs hetero-structures is described. Electron transport studies indicate that these heterojunctions are of high quality. Shubnikov-de Haas measurement of the AlSb/InAs/GaSb quantum well shows a two-dimensional electron gas of concentration 2×1012cm2 and a low-temperature mobility approaching 105cm2/Vs. Low-temperature capacitance/voltage measurement indicates that the thin AlSb barrier is a classical Mott-type barrier.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; electron gas; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor superlattices; (Al, Ga)Sb/InAs heterojunctions; (AlGa)Sb-InAs; AlSb-InAs-GaSb quantum well; Shubnikov-de Haas measurement; capacitance/voltage measurement; classical Mott-type barrier; electron transport; epitaxial growth; low-temperature mobility; molecular beam epitaxy; semiconductor superlattices; thin AlSb barrier; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870648
