• DocumentCode
    1035396
  • Title

    Electron transport of (Al,Ga)Sb/InAs heterojunctions prepared by molecular beam epitaxy

  • Author

    Chiu, T.H. ; Tsang, W.T. ; Levi, A.F.J.

  • Author_Institution
    AT&T Bell Laboratories, Holmdel, USA
  • Volume
    23
  • Issue
    17
  • fYear
    1987
  • Firstpage
    917
  • Lastpage
    919
  • Abstract
    Molecular beam epitaxial growth of (Al,Ga)Sb/InAs hetero-structures is described. Electron transport studies indicate that these heterojunctions are of high quality. Shubnikov-de Haas measurement of the AlSb/InAs/GaSb quantum well shows a two-dimensional electron gas of concentration 2×1012cm2 and a low-temperature mobility approaching 105cm2/Vs. Low-temperature capacitance/voltage measurement indicates that the thin AlSb barrier is a classical Mott-type barrier.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier mobility; electron gas; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor superlattices; (Al, Ga)Sb/InAs heterojunctions; (AlGa)Sb-InAs; AlSb-InAs-GaSb quantum well; Shubnikov-de Haas measurement; capacitance/voltage measurement; classical Mott-type barrier; electron transport; epitaxial growth; low-temperature mobility; molecular beam epitaxy; semiconductor superlattices; thin AlSb barrier; two-dimensional electron gas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870648
  • Filename
    4257986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035396