Title :
Impedance switching effects in GaAs/AlAs barrier structures
Author :
Campbell, A.C. ; Kesan, V.P. ; Crook, V. P Kesan G E ; Maziar, C.M. ; Neikirk, D.P. ; Streetman, B.G.
Author_Institution :
University of Texas at Austin, Microelectronics Research Center and Electronics Research Center, Austin, USA
Abstract :
AlAs tunnel barriers in MBE-grown GaAs layers have been studied using pulsed and continuous I/V and swept temperature/capacitance measurements. Such layers demonstrate an impedance switching phenomenon which is persistent and repeatable. This impedance switching is manifested by the device as two distinct impedance modes: a high-impedance mode (of the order of 10k¿ at DC for a 0.3 mm dot), and a low-impedance mode (of the order of 10¿). Such a phenomenon may restrict the operation of some devices, but may lead to other novel applications.
Keywords :
III-V semiconductors; aluminium compounds; electric impedance; gallium arsenide; semiconductor junctions; switching; tunnelling; AlAs tunnel barriers; GaAs-AlAs barrier structures; MBE-grown GaAs layers; continuous I/V measurements; high-impedance mode; impedance switching; low-impedance mode; pulsed I/V measurements; semiconductor junctions; swept temperature/capacitance measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870652
