Design of a tunable GaAs/AlGaAs multiple-quantum-well resonant-cavity photodetector

Author

Lai, Kafai ; Campbell, Joe C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

30

Issue

1

fYear

1994

fDate

1/1/1994 12:00:00 AM

Firstpage

108

Lastpage

114

Abstract

We describe a tunable p-i-n photodetector using GaAs/AlGaAs multiple quantum wells (MQW) embedded in a vertical resonant cavity. The structure is similar to that employed for Fabry-Perot MQW modulators and lasers. Turnability is achieved by utilizing the quantum-confined Stark effect. The calculated response predicts a tuning range up to 20 nm. As a dual-channel wavelength-division demultiplexer, the crosstalk ratio is calculated to be <-5 dB for one channel and <-15 dB for the other. The quantum efficiencies are projected to be in the range of 40% to 55%

Keywords

III-V semiconductors; Stark effect; aluminium compounds; gallium arsenide; multiplexing equipment; optical resonators; photodetectors; semiconductor quantum wells; tuning; wavelength division multiplexing; 40 to 55 percent; Fabry-Perot MQW modulators; GaAs-AlGaAs; GaAs/AlGaAs; MQW; MQW resonant cavity photodetector design; crosstalk ratio; dual-channel wavelength-division demultiplexer; lasers; multiple-quantum-well resonant-cavity photodetector; quantum efficiencies; quantum-confined Stark effect; tunable p-i-n photodetector; tuning range; vertical resonant cavity; Fabry-Perot; Gallium arsenide; Laser tuning; PIN photodiodes; Photodetectors; Quantum well devices; Quantum well lasers; Resonance; Stark effect; Tunable circuits and devices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.272067

Filename

272067