• DocumentCode
    1035469
  • Title

    Double-heterojunction bipolar transistors in InP/GaInAs grown by metal organic chemical vapour deposition

  • Author

    Houston, P.A. ; Blaauw, C. ; Margittai, A. ; Svilans, M.N. ; Puetz, N. ; Day, D.J. ; Shepherd, F.R. ; SpringThorpe, A.J.

  • Author_Institution
    Bell-Northern Research, Ottawa, Canada
  • Volume
    23
  • Issue
    18
  • fYear
    1987
  • Firstpage
    931
  • Lastpage
    932
  • Abstract
    Double-heterojunction bipolar transistor structures in InP/GaInAs have been grown by low-pressure metal organic chemical vapour deposition. Good control of the Zn dopant in the GaInAs base layer was achieved, and devices with current gains up to 300 at current densities of 1.4kA/cm2 have been demonstrated.
  • Keywords
    III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; semiconductor growth; vapour phase epitaxial growth; III-V semiconductors; InP-GaInAs:Zn; Zn dopant; bipolar transistors; double heterojunction device; low pressure MOCVD; metal organic chemical vapour deposition;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870656
  • Filename
    4257995
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035469