Title :
High-power, wide-bandwidth, 1.55 μm-wavelength GaInAsP/InP distributed feedback laser
Author :
Kihara, K. ; Kamite, K. ; Sudo, H. ; Tanahashi, Toshiyuki ; Kusunoki, Takashi ; Isozumi, S. ; Ishikawa, Hiroshi ; Imai, H.
Author_Institution :
Fujitsu Laboratories Ltd., Optical Semiconductor Device Laboratory, Atsugi, Japan
Abstract :
A high output power of 52 mW and wide bandwidth of 9.8 GHz have been achieved in a 1.55 μm-wavelength distributed feedback laser with a flat-surface buried heterostructure by optimising the coupling coefficient and reducing the parasitic capacitance.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 1.55 micron; 52 mW; 9.8 GHz; DFB laser; GaInAsP-InP; coupling coefficient optimisation; distributed feedback laser; flat-surface buried heterostructure; high output power; parasitic capacitance reduction; semiconductor laser; wide-bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870663
