DocumentCode :
1035600
Title :
Design and AC characteristics of silicon MOS hall elements
Author :
Gallagher, R. ; Corak, W.
Author_Institution :
Westinghouse Electric Corporation, Baltimore, Md
Volume :
3
Issue :
3
fYear :
1967
fDate :
9/1/1967 12:00:00 AM
Firstpage :
380
Lastpage :
380
Keywords :
Hall effect devices; Semiconductor devices; Circuits; Electrons; Fabrication; Hall effect; MOSFETs; Radiative recombination; Resistors; Silicon; Spontaneous emission; Threshold voltage;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1967.1066081
Filename :
1066081
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1035600
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