Title :
GaInAsP/InP unstable resonator lasers
Author :
Wang, Huifang ; Liu, Y.Y. ; Mittelstein, M. ; Chen, Tiffani R. ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Pasadena, USA
Abstract :
Double-heterostructure GaInAsP/InP unstable resonator lasers have been fabricated for the first time. Both facets are made by a simple two-step chemical etching process. The required nearly vertical lateral curved cavity mirrors are achieved. The unstable resonator lasers exhibit an output power of 105 mW.
Keywords :
III-V semiconductors; etching; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical workshop techniques; semiconductor junction lasers; 105 mW; GaInAsP-InP; double heterostructure; fabrication process; semiconductor lasers; two-step chemical etching process; unstable resonator lasers; vertical lateral curved cavity mirrors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870668
