Title :
Wideband monolithic GaAs amplifier using cascodes
Author :
Colleran, W.T. ; Abidi, A.A.
Author_Institution :
University of California, Integrated Circuits & Systems Laboratory, Electrical Engineering Department, Los Angeles, USA
Abstract :
A monolithic matched, two-stage wideband amplifier with an insertion gain of 26dB and a ¿ 3dB bandwidth of 3-2GHz is reported. Optimally designed cascode circuits are used to enhance the gain-bandwidth product available per stage. The IC has been fabricated in a I¿ depletion GaAs MESFET technology.
Keywords :
III-V semiconductors; field effect integrated circuits; microwave amplifiers; microwave integrated circuits; wideband amplifiers; 26 dB; 3.2 GHz; GaAs; III-V semiconductors; MESFET technology; cascode circuits; gain-bandwidth product; insertion gain; two-stage wideband amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870669
