Title :
Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructure
Author :
Suzuki, A. ; Itoh, Takayuki ; Terakado, T. ; Kasahara, K. ; Asano, Katsunori ; Inomoto, Y. ; Ishihara, H. ; Torikai, T. ; Fujita, S.
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
A long-wavelength PINFET OEIC has been fabricated on a GaAs-on-InP heterostructure for the first time. A receiver sensitivity as high as ¿31 dBm for 600Mbit/s NRZ has been obtained. The great potential of the GaAs-on-InP hetero-structure for high-performance, long-wavelength OEIC applications has been demonstrated.
Keywords :
III-V semiconductors; integrated optoelectronics; optical communication equipment; 600 Mbit/s; GaAs-InP; NRZ; long-wavelength PINFET OEIC; receiver sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870671
