Characteristics for Bloch line memory with field access scheme

Author

Mizuno, K. ; Matsutera, H. ; Kawahara, H. ; Hidaka, Y.

Author_Institution

NEC Corp., Kawasaki, Japan

Volume

25

Issue

5

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

4242

Lastpage

4244

Abstract

The characteristics of functions such as read/write gate operation and vertical Bloch line (VBL) propagation have been investigated for a VBL memory with a field access scheme. The memory is compared of a minor loop utilizing a stabilized ring-shaped domain and a read/write gate with three-level conductor patterns. Potential wells that define the VBL bit position are formed by an in-plane field from a zigzag conductor for evaluation of VBL propagation. The read/write gate and VBL pair propagation operations are confirmed. A bias field margin of 7 Oe (10%) is obtained, verifying the feasibility of this device

Keywords

magnetic bubble memories; magnetic domain walls; Bloch line memory; VBL memory; VBL pair propagation; VBL propagation; bias field margin; characteristics; feasibility; field access scheme; in-plane field; minor loop; operation; read/write gate operation; stabilized ring-shaped domain; three-level conductor patterns; vertical Bloch line; vertical Bloch line memory; vertical Bloch line propagation; zigzag conductor; Conductive films; Conductors; Laboratories; Magnetic heads; Magnetization; Microelectronics; National electric code; Potential well; Read-write memory; Testing;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.42582

Filename

42582