Modeling frequency dependence of GaAs MESFET characteristics

Author

Conger, Jeff ; Peczalski, Andrzej ; Shur, Michael S.

Author_Institution

Cray Res. Inc., Chippewa Falls, WI, USA

Volume

29

Issue

1

fYear

1994

fDate

1/1/1994 12:00:00 AM

Firstpage

71

Lastpage

76

Abstract

We present a new method of modeling the output conductance dispersion of GaAs MESFET´s. High frequency model parameters are extracted and then used to model high frequency output conductance over a wide range of bias conditions. The model is then used to simulate and analyze the effect of output conductance dispersion on the performance of DCFL and SCFL logic gates. Whereas the DCFL performance is not significantly affected by the high frequency effects, the noise margin of SCFL decreases by almost a factor of 30% above 100 kHz, with an associated decrease in the voltage swing and gate delay

Keywords

III-V semiconductors; Schottky gate field effect transistors; direct coupled FET logic; field effect integrated circuits; gallium arsenide; integrated logic circuits; logic gates; semiconductor device models; 0.001 Hz to 100 kHz; DCFL logic gates; GaAs; GaAs MESFET characteristics; SCFL logic gates; bias conditions; frequency dependence; gate delay; high frequency I-V characteristics; high frequency model parameters; noise margin; output conductance dispersion; switching performance; voltage swing; Analytical models; Data mining; Dispersion; FETs; Frequency dependence; Frequency measurement; Gallium arsenide; MESFET circuits; Performance analysis; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.272098

Filename

272098