DC modeling and characterization of AlGaAs/GaAs heterojunction bipolar transistors for high-temperature applications

Author

Dikmen, Cemal T. ; Dogan, Numan S. ; Osman, Mohamed A.

Author_Institution

Sch. of Electr. Eng. and Comput. Sci., Washington State Univ., Pullman, WA, USA

Volume

29

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

108

Lastpage

116

Abstract

The large signal dc characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBT) at high temperatures (27°-300°C) are reported. A high-temperature SPICE model is developed which includes the recombination-generation current components and avalanche multiplication which become extremely important at high temperatures. The effect of avalanche breakdown is also included to model the current due to thermal generation of electron/hole pairs causing breakdown at high temperatures. A parameter extraction program is developed and used to extract the model parameters of HBT´s at different temperatures. Fitting functions for the model parameters as a function of temperature are developed. These parameters are then used in the SPICE Ebers-Moll model for the dc characterization of the HBT at any temperature between (27°-300°C)

Keywords

III-V semiconductors; SPICE; aluminium compounds; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; high-temperature techniques; impact ionisation; semiconductor device models; 27 to 300 C; AlGaAs-GaAs; AlGaAs/GaAs heterojunction bipolar transistors; DC modeling; HBT; SPICE Ebers-Moll model; avalanche breakdown; avalanche multiplication; electron/hole pair thermal generation; fitting functions; high-temperature SPICE model; high-temperature applications; large signal DC characteristics; parameter extraction program; recombination-generation current components; Avalanche breakdown; Gallium arsenide; Heterojunction bipolar transistors; Instruments; Leakage current; Parameter extraction; SPICE; Silicon; Temperature dependence; Temperature distribution;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.272113

Filename

272113