Title :
Short channel models and scaling limits of SOI and bulk MOSFETs
Author :
Agrawal, B. ; De, V.K. ; Pimbley, J.M. ; Meindl, J.D.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
2/1/1994 12:00:00 AM
Abstract :
Analytical device-physics-based models for subthreshold drain current in short channel SOI MOSFETs facilitate accurate and efficient circuit simulation. These models also enable prediction of device scaling limits determined by subthreshold conduction and comparison of these limits with bulk MOSFETs for the same threshold and supply voltages
Keywords :
circuit analysis computing; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; SOI MOSFET; analytical device-physics-based models; bulk MOSFET; circuit simulation; scaling limits; short channel models; subthreshold conduction; subthreshold drain current; subthreshold swing; Analytical models; Circuit simulation; MOSFET circuits; Predictive models; Silicon on insulator technology; Substrates; Subthreshold current; Switches; Systems engineering and theory; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
