DocumentCode
1035759
Title
Short channel models and scaling limits of SOI and bulk MOSFETs
Author
Agrawal, B. ; De, V.K. ; Pimbley, J.M. ; Meindl, J.D.
Author_Institution
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Volume
29
Issue
2
fYear
1994
fDate
2/1/1994 12:00:00 AM
Firstpage
122
Lastpage
125
Abstract
Analytical device-physics-based models for subthreshold drain current in short channel SOI MOSFETs facilitate accurate and efficient circuit simulation. These models also enable prediction of device scaling limits determined by subthreshold conduction and comparison of these limits with bulk MOSFETs for the same threshold and supply voltages
Keywords
circuit analysis computing; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; SOI MOSFET; analytical device-physics-based models; bulk MOSFET; circuit simulation; scaling limits; short channel models; subthreshold conduction; subthreshold drain current; subthreshold swing; Analytical models; Circuit simulation; MOSFET circuits; Predictive models; Silicon on insulator technology; Substrates; Subthreshold current; Switches; Systems engineering and theory; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.272115
Filename
272115
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