Title :
Measurement of MOS current mismatch in the weak inversion region
Author :
Forti, Francesco ; Wright, Michael E.
Author_Institution :
Lawrence Berkeley Lab., CA, USA
fDate :
2/1/1994 12:00:00 AM
Abstract :
Measures the current matching properties of MOS transistors operated in the weak inversion region. The authors measured a total of about 1400 PMOS and NMOS transistors produced in four different processes and report the results in terms of mismatch dependance on current density, device dimensions, and substrate voltage, without using any specific model for the transistor
Keywords :
carrier density; insulated gate field effect transistors; inversion layers; MOS current mismatch; MOS transistors; NMOS transistors; PMOS transistors; current density; current matching properties; device dimensions; substrate voltage; weak inversion region; Circuits; Current density; Current measurement; Density measurement; Extraterrestrial measurements; Fluctuations; MOS devices; MOSFETs; Size measurement; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
