• DocumentCode
    1035804
  • Title

    Hydrogen plasma etching of amorphous and microcrystalline silicon

  • Author

    van Oort, R.C. ; Geerts, M.J. ; van den Heuvel, J.C. ; Metselaar, J.W.

  • Author_Institution
    Technical University of Delft, Faculty of Electrical Engineering, Delft, Netherlands
  • Volume
    23
  • Issue
    18
  • fYear
    1987
  • Firstpage
    967
  • Lastpage
    968
  • Abstract
    The etching of amorphous and microcrystalline silicon films in a hydrogen plasma has been investigated. For amorphous silicon an etch rate of 2.4 A/s was found. Microcrystalline silicon is etched at a rate of 0.3 A/s. Microcrystalline silicon consists of two phases. The amorphous part is removed preferably.
  • Keywords
    amorphous semiconductors; elemental semiconductors; semiconductor thin films; silicon; sputter etching; H2 plasma; Si; amorphous; etch rate; microcrystalline; phases; plasma etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870680
  • Filename
    4258748
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035804