Title :
Avalanche noise associated with gate current of Si JFET
Author :
Peransin, J.M. ; Rigaud, D. ; Alabedra, R.
Author_Institution :
Universite des Sciences et Techniques du Languedoc, Centre d´´Electronique de Montpellier, Unitée associé CNRS UA 391, Montpellier, France
Abstract :
Measurements are reported on the noise behaviour of the gate current in n-channel JFETs. Various bias conditions have been used to investigate the initial stage of the avalanche effect. It is shown that the Ieq noise varies with Ig if the avalanche effect is located in the channel and with 14g in the case of ionisation due to a high field at the gate junction.
Keywords :
electron device noise; junction gate field effect transistors; Si; avalanche effect; bias conditions; gate current; gate junction; high field; ionisation; n-channel JFETs; noise behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870682
