Title :
High-frequency oscillations in epitaxial layers of GaAs by circuit control of domain growth
Author :
Taylor, B.C. ; Gibbs, S.E.
fDate :
2/1/1969 12:00:00 AM
Keywords :
Circuits; Doping profiles; Epitaxial layers; Frequency; Gallium arsenide; Laboratories; Pulse generation; Pulse width modulation; Space vector pulse width modulation; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1969.16728
