DocumentCode :
1035949
Title :
MONOS memory element
Author :
Lin, H.C.
Volume :
16
Issue :
2
fYear :
1969
fDate :
2/1/1969 12:00:00 AM
Firstpage :
258
Lastpage :
258
Keywords :
Absorption; FETs; Laboratories; MONOS devices; MOSFET circuits; Paramagnetic materials; Quantization; Semiconductor device noise; Thermal resistance; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1969.16730
Filename :
1475772
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1035949
