Title :
Study of the inversion layer mobility and the improvement in gmof MOSFET
Author :
Nishi, Yoshio ; Tanaka, Kiyoshi
fDate :
2/1/1969 12:00:00 AM
Keywords :
Absorption; FETs; Laboratories; MOSFET circuits; Paramagnetic materials; Paramagnetic resonance; Quantization; Semiconductor device noise; Thermal resistance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1969.16731
