• DocumentCode
    1036082
  • Title

    Charge pumping in MOS devices

  • Author

    Brugler, J. Stephen ; Jespers, Paul G A

  • Author_Institution
    Stanford University, Stanford, Calif.
  • Volume
    16
  • Issue
    3
  • fYear
    1969
  • fDate
    3/1/1969 12:00:00 AM
  • Firstpage
    297
  • Lastpage
    302
  • Abstract
    Gate pulses applied to MOS transistors were found to stimulate a net flow of charge into the substrate. Investigation of this effect revealed a charge-pumping phenomeonon in MOS gate-controlled-diode structures. A first-order theory is given, whereby the injected charge is separated into two components. One component involves coupling via fast surface states at the Si-SiO2interface under the gate, while the other involves recombination of free inversion-layer charge into the substrate.
  • Keywords
    Ammeters; Charge measurement; Charge pumps; Current measurement; Frequency; MOS devices; MOSFETs; Pulse measurements; Virtual reality; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1969.16744
  • Filename
    1475786
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1036082