Title :
Efficiency calculations of heterojunction solar energy converters
Author :
Sreedhar, A.K. ; Sharma, B.L. ; Purohit, R.K.
Author_Institution :
Solid State Physics Laboratory, Delhi, India
fDate :
3/1/1969 12:00:00 AM
Abstract :
A theoretical evaluation of the maximum attainable solar conversion efficiencies of p-n and n-p heterodiodes is presented. The calculations are made for some of the theoretically efficient and feasible heterojunctions of IV and III-V group semiconductors. In these calculations, the Anderson diffusion model is used and carrier concentrations of the two semiconductors are so chosen that photo-carriers generated do not have to surmount any junction barrier. The calculated efficiencies are compared with the reported experimental values and with the conventional Si photovoltaic cell.
Keywords :
Charge carrier processes; Heterojunctions; Impurities; Narrowband; P-n junctions; Photonic band gap; Photovoltaic cells; Semiconductor materials; Solar energy; Variable speed drives;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1969.16746