• DocumentCode
    1036189
  • Title

    The analysis of chemical and metallurgical changes in microcircuit metalization systems

  • Author

    Bart, John J.

  • Author_Institution
    Rome Air Development Center, Griffiss AFB, Rome, N. Y.
  • Volume
    16
  • Issue
    4
  • fYear
    1969
  • fDate
    4/1/1969 12:00:00 AM
  • Firstpage
    351
  • Lastpage
    356
  • Abstract
    Chemical and metallurgical changes in IC metalization systems have been studied during a program of device reliability testing and evaluation. This paper discusses the four reactions responsible for the majority of the observed metalization failures: 1) migration of aluminum under silicon dioxide layers, 2) movement of silicon through both gold and aluminum wires resulting in loss of mechanical strength, 3) structural changes in the molybdenum-gold system occurring during temperature storage testing, and 4) the electrochemical attack of the molybdenum barrier layer resulting from humidity storage testing with applied bias. Using standard optical techniques and a commercially available electron beam microanalyzer/scanning electron microscope, the following results were obtained. 1) At temperatures near the silicon-aluminum eutectic point, aluminum migrated under the thermally grown oxide in the form of triangles oriented with respect to the underlying silicon. Aluminum migration was observed at lower temperatures when bias was applied to the device. This occurred at the interface of the thermal silicon dioxide and a vapor deposited glass. 2) Silicon precipitation at wire grain boundaries was observed in both aluminum and gold lead wires. The mechanisms of solid-state diffusion and high-current density electromigration of silicon resulted in wire fracture or slip at grain boundaries in the wires. 3) Silicon penetration into gold conductor stripes through defects in the molybdenum barrier layer resulted in severe reordering of the gold at temperatures in excess of 300°C. The silicon-gold eutectic was formed at temperatures greater than 370°C causing complete dewetting of the molybdenum layer. At lower temperatures, grain boundary flaking due to loss of gold cohension and adhesion was observed. 4) Whiskers which formed on molybdenum barrier layers during 85-85 humidity storage testing with applied bias contained high concentrations of sodium. Several known compounds of sodium and molybdenum are discussed in light of the X-ray data taken on the electron beam microprobe.
  • Keywords
    Aluminum; Chemical analysis; Electron beams; Gold; Grain boundaries; Humidity; Silicon compounds; System testing; Temperature; Wires;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1969.16756
  • Filename
    1475798