Title :
Neutron Cross-Section of N-Modular Redundancy Technique in SRAM-Based FPGAs
Author :
Tarrillo, Jimmy ; Lima Kastensmidt, Fernanda ; Rech, P. ; Frost, Christopher ; Valderrama, Carlos
Author_Institution :
Inst. de Inf., UFRGS, Porto Alegre, Brazil
Abstract :
In this paper the fault-masking capability of N-modular redundancy systems synthesized into SRAM-based FPGAs is evaluated. In the proposed N-modular technique an original self-adaptive majority voter elects the outputs of the redundant modules. Experimentally evaluated neutron cross-section, area, and power consumption were analyzed for different numbers of redundant modules, ranging from 3 copies (standard TMR) up to 7 copies.
Keywords :
SRAM chips; field programmable gate arrays; integrated circuit reliability; neutron effects; radiation hardening (electronics); N-modular redundancy technique; SRAM based FPGA; fault masking capability; neutron cross-section; original self-adaptive majority voter; redundant module; triple modular redundancy; Circuit faults; Field programmable gate arrays; Nuclear magnetic resonance; Power demand; Redundancy; Tunneling magnetoresistance; Fault tolerance; N-modular redundancy; SRAM-based FPGAs;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2343259
