DocumentCode :
1036215
Title :
Scanning electron mirror microscopy and scanning electron microscopy of integrated circuits
Author :
Cline, James E. ; Morris, James M. ; Schwartz, Seymour
Author_Institution :
National Aeronautics and Space Administration, Cambridge, Mass.
Volume :
16
Issue :
4
fYear :
1969
fDate :
4/1/1969 12:00:00 AM
Firstpage :
371
Lastpage :
375
Abstract :
The recently developed scanning electron mirror microscope (SEMM) is compared with other types of electron microscopes, such as the electron mirror microscope (EMM) and the scanning electron microscope (SEM), for examining integrated circuits. Potential advantages of the SEMM include high resolution, elimination of electron bombardment damage, and high sensitivity of voltage gradients, magnetic fields, and topography. Preliminary observations of integrated, circuits obtained with the feasibility SEMM at various specimen potentials are discussed.
Keywords :
Cathodes; Electron beams; Electron optics; Lenses; Magnetic fields; Mirrors; Scanning electron microscopy; Space technology; Surface topography; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1969.16759
Filename :
1475801
Link To Document :
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