DocumentCode
1036215
Title
Scanning electron mirror microscopy and scanning electron microscopy of integrated circuits
Author
Cline, James E. ; Morris, James M. ; Schwartz, Seymour
Author_Institution
National Aeronautics and Space Administration, Cambridge, Mass.
Volume
16
Issue
4
fYear
1969
fDate
4/1/1969 12:00:00 AM
Firstpage
371
Lastpage
375
Abstract
The recently developed scanning electron mirror microscope (SEMM) is compared with other types of electron microscopes, such as the electron mirror microscope (EMM) and the scanning electron microscope (SEM), for examining integrated circuits. Potential advantages of the SEMM include high resolution, elimination of electron bombardment damage, and high sensitivity of voltage gradients, magnetic fields, and topography. Preliminary observations of integrated, circuits obtained with the feasibility SEMM at various specimen potentials are discussed.
Keywords
Cathodes; Electron beams; Electron optics; Lenses; Magnetic fields; Mirrors; Scanning electron microscopy; Space technology; Surface topography; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1969.16759
Filename
1475801
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