• DocumentCode
    1036215
  • Title

    Scanning electron mirror microscopy and scanning electron microscopy of integrated circuits

  • Author

    Cline, James E. ; Morris, James M. ; Schwartz, Seymour

  • Author_Institution
    National Aeronautics and Space Administration, Cambridge, Mass.
  • Volume
    16
  • Issue
    4
  • fYear
    1969
  • fDate
    4/1/1969 12:00:00 AM
  • Firstpage
    371
  • Lastpage
    375
  • Abstract
    The recently developed scanning electron mirror microscope (SEMM) is compared with other types of electron microscopes, such as the electron mirror microscope (EMM) and the scanning electron microscope (SEM), for examining integrated circuits. Potential advantages of the SEMM include high resolution, elimination of electron bombardment damage, and high sensitivity of voltage gradients, magnetic fields, and topography. Preliminary observations of integrated, circuits obtained with the feasibility SEMM at various specimen potentials are discussed.
  • Keywords
    Cathodes; Electron beams; Electron optics; Lenses; Magnetic fields; Mirrors; Scanning electron microscopy; Space technology; Surface topography; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1969.16759
  • Filename
    1475801