Title :
MOCVD-grown AlGaAs/GaAs HBTs with epitaxially embedded p+ layers in extrinsic base
Author :
Taira, K. ; Kawai, H. ; Kaneko, K.
Author_Institution :
Sony Corporation, Research Center, Yokohama, Japan
Abstract :
AlGaAs/GaAs HBTs having a 300 Ã… base were grown by two-stage MOCVD. In the second stage, p+ layers were epitaxially embedded in the extrinsic base to make the base contact. The current through the parasitic pn interface between the emitter and the embedded p+ layers was negligible. The technique employed here makes undamaged narrow-base HBTs possible.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; chemical vapour deposition; gallium arsenide; semiconductor growth; AlGaAs-GaAs; base contact; extrinsic base; narrow-base HBTs; semiconductors; two-stage MOCVD;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870694
