Title :
Fabrication and performance of 1.5μm GaInAsP travelling-wave laser amplifiers with angled facets
Author :
Zah, C.E. ; Osinski, J.S. ; Caneau, Catherine ; Menocal, S.G. ; Reith, L.A. ; Salzman, J. ; Shokoohi, F.K. ; Lee, T.P.
Author_Institution :
Bell Communications Research, Inc., Red Bank, USA
Abstract :
A broadband 1.5μm GaInAsP travelling-wave laser ampli-fier has been realised with angled facets instead of anti-reflection coatings. The measured signal gain for the TE mode is 19dB at the wavelength around 1.49μm with a 2dB gain ripple over one free spectral range and a 3dB band-width of 55 nm. The estimated residual modal reflectivity is 0.2%.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; 1.5 micron; 19 dB; GaInAsP; TE mode; angled facets; antireflection coatings; bandwidth; gain ripple; laser TWA; performance; residual modal reflectivity; signal gain; spectral range; travelling-wave laser amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870695
