Title :
Epitaxial, thermodynamically stabilised metal/III-V compound semiconductor interface: NiGa on GaAs (001)
Author :
Guivarc´h, A. ; Guerin, Roch ; Secoue, M.
Author_Institution :
Centre National d´Etudes des Télécommunications, LAB/ICM/MPA, Lannion, France
Abstract :
Crystalline thin films of the intermetallic compound NiGa have been grown by molecular beam epitaxy (MBE) on GaAs (001) substrate. The epitaxied NiGa films are chemically stable and continuous up to at least 500°C and present a resistivity of 10 ¿¿ cm, quite equivalent to that of the best silicide thin films.
Keywords :
III-V semiconductors; gallium alloys; gallium arsenide; metallisation; molecular beam epitaxial growth; nickel alloys; semiconductor-metal boundaries; 1E-5 ohmcm; 500 C; GaAs; III-V semiconductors; MBE; NiGa conductive films; NiGa metallisation; NiGa-GaAs; intermetallic compound NiGa; molecular beam epitaxy; stabilised metal/III-V compound semiconductor interface;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870704
