DocumentCode
1036333
Title
High-performance GaAs power MESFET with AlGaAs buffer layer
Author
Kim, Bumki ; Wurtele, M. ; Shih, H.D. ; Tserng, Hua-Quen
Author_Institution
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Volume
23
Issue
19
fYear
1987
Firstpage
1008
Lastpage
1010
Abstract
The performance of a power MESFET has been significantly improved by using an AlGaAs heterobuffer. The conduction-band discontinuity at the heterointerface acts as a potential barrier for electron confinement; the RF conversion efficiency and power gain of the FET were very high compared with a standard MESFET. We have achieved 41% power-added efficiency with 0.88 W/mm power density at 21.5 GHz and 30% efficiency with 0.56 W/mm at 35 GHz.
Keywords
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; power transistors; semiconductor technology; solid-state microwave devices; 21.5 GHz; 30 percent; 35 GHz; 41 percent; AlGaAs buffer layer; AlGaAs heterobuffer; EHF; GaAs power MESFET; GaAs-AlGaAs interface; RF conversion efficiency; SHF; conduction-band discontinuity; electron confinement; heterointerface; potential barrier; power gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870707
Filename
4258943
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