Title :
High-performance GaAs power MESFET with AlGaAs buffer layer
Author :
Kim, Bumki ; Wurtele, M. ; Shih, H.D. ; Tserng, Hua-Quen
Author_Institution :
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Abstract :
The performance of a power MESFET has been significantly improved by using an AlGaAs heterobuffer. The conduction-band discontinuity at the heterointerface acts as a potential barrier for electron confinement; the RF conversion efficiency and power gain of the FET were very high compared with a standard MESFET. We have achieved 41% power-added efficiency with 0.88 W/mm power density at 21.5 GHz and 30% efficiency with 0.56 W/mm at 35 GHz.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; power transistors; semiconductor technology; solid-state microwave devices; 21.5 GHz; 30 percent; 35 GHz; 41 percent; AlGaAs buffer layer; AlGaAs heterobuffer; EHF; GaAs power MESFET; GaAs-AlGaAs interface; RF conversion efficiency; SHF; conduction-band discontinuity; electron confinement; heterointerface; potential barrier; power gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870707
