DocumentCode
1036345
Title
Out-diffusion and reactivation of Zn in InP substrates
Author
Jung, H. ; Marschall, P.
Author_Institution
AEG Aktiengesellschaft, Forschungsinstitut Ulm, Ulm, West Germany
Volume
23
Issue
19
fYear
1987
Firstpage
1010
Lastpage
1011
Abstract
The influence of temperature on p-doping in Zn-diffused InP substrates has been investigated. By cooling the diffused InP samples very slowly after diffusion or subjecting them to heat treatment, significant out-diffusion of Zn has been observed. By heat-treating with rapid cooling, a substantial fraction of the incorporated but electrically inactive Zn atoms can be reactivated, resulting in a drastically increased acceptor concentration.
Keywords
III-V semiconductors; cooling; diffusion in solids; indium compounds; semiconductor doping; zinc; InP:Zn; cooling rate; heat-treating with rapid cooling; increased acceptor concentration; influence of temperature; out-diffusion; p-doping; reactivation; slow cooling;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870708
Filename
4258944
Link To Document