Title :
Room-temperature 1.55μm optical bistability in a GaInAs/AlInAs multiple-quantum-well etalon
Author :
Kawaguchi, Hitoshi ; Kawamura, Yuriko
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
1.55 μm optical bistability has been observed in a Gain As/AlInAs MQW etalon at room temperature, and we have shown that the nonlinear mechanism responsible for the bistability is due to an electronic nonlinearity in the refractive index.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light interferometers; optical bistability; 1.55 micron; GaInAs-AlInAs; MQW etalon; electronic nonlinearity in refractive index; nonlinear mechanism; optical bistability; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870710
