• DocumentCode
    1036362
  • Title

    Room-temperature 1.55μm optical bistability in a GaInAs/AlInAs multiple-quantum-well etalon

  • Author

    Kawaguchi, Hitoshi ; Kawamura, Yuriko

  • Author_Institution
    NTT Electrical Communications Laboratories, Atsugi, Japan
  • Volume
    23
  • Issue
    19
  • fYear
    1987
  • Firstpage
    1013
  • Lastpage
    1014
  • Abstract
    1.55 μm optical bistability has been observed in a Gain As/AlInAs MQW etalon at room temperature, and we have shown that the nonlinear mechanism responsible for the bistability is due to an electronic nonlinearity in the refractive index.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light interferometers; optical bistability; 1.55 micron; GaInAs-AlInAs; MQW etalon; electronic nonlinearity in refractive index; nonlinear mechanism; optical bistability; room temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870710
  • Filename
    4258946
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1036362