DocumentCode :
1036519
Title :
Integration of GaAS MESFET drivers with GaAs directional-coupler electro-optic modulators
Author :
Abeles, J.H. ; Chan, W.K. ; Shokoohi, F.K. ; Bhat, R. ; Koza, M.A.
Author_Institution :
Bell Communications Research, Red Bank, USA
Volume :
23
Issue :
20
fYear :
1987
Firstpage :
1037
Lastpage :
1038
Abstract :
We demonstrate the first integration of active electronic devices with semiconductor waveguide modulators. By combining ion-implanted GaAs MESFET amplifiers with directional-coupler electro-optic modulators, the DC drive voltage has been reduced by a factor of ¿v = 9, making an effective electro-optic figure-of-merit ¿vn3r41 for GaAs superior to that of LiNbO3
Keywords :
III-V semiconductors; Schottky gate field effect transistors; directional couplers; electro-optical devices; gallium arsenide; integrated optics; integrated optoelectronics; optical modulation; optical waveguide components; DC drive voltage; GaAs; MESFET amplifiers; directional-coupler electro-optic modulators; electro-optic figure-of-merit; integrated optoelectronics; semiconductor waveguide modulators;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870725
Filename :
4258962
Link To Document :
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