Title :
Monolithic photoreceiver integrating GaInAs PIN/JFET with diffused junctions
Author :
Renaud, J.C. ; Guyen, L.N. ; Allovon, M. ; Heliot, F. ; Lugiez, F. ; Scavennec, A.
Author_Institution :
Centre National d´´Etudes des Telecommunications, Laboratoire de Bagneux, Bagneux, France
Abstract :
A new integrated PIN/JFET using an original three-layer GalnAs structure has been developed in order to optimise both devices separately. Thanks to the good performances and high reliability of individual components, the sensitivity of such monolithic photoreceivers is ¿ 33.7 dBm for a 10¿9 bit error rate at 140 Mbit/s.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; optical communication equipment; photodiodes; receivers; GaInAs structure; diffused junctions; integrated PIN/JFET; monolithic photoreceivers; optical communications; sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870737
