• DocumentCode
    1036624
  • Title

    Monolithic photoreceiver integrating GaInAs PIN/JFET with diffused junctions

  • Author

    Renaud, J.C. ; Guyen, L.N. ; Allovon, M. ; Heliot, F. ; Lugiez, F. ; Scavennec, A.

  • Author_Institution
    Centre National d´´Etudes des Telecommunications, Laboratoire de Bagneux, Bagneux, France
  • Volume
    23
  • Issue
    20
  • fYear
    1987
  • Firstpage
    1055
  • Lastpage
    1056
  • Abstract
    A new integrated PIN/JFET using an original three-layer GalnAs structure has been developed in order to optimise both devices separately. Thanks to the good performances and high reliability of individual components, the sensitivity of such monolithic photoreceivers is ¿ 33.7 dBm for a 10¿9 bit error rate at 140 Mbit/s.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; optical communication equipment; photodiodes; receivers; GaInAs structure; diffused junctions; integrated PIN/JFET; monolithic photoreceivers; optical communications; sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870737
  • Filename
    4258974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1036624