Title :
Review of thin-film switching
Author :
Hagedorn, Fred B.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, NJ, USA
fDate :
3/1/1968 12:00:00 AM
Abstract :
Flux reversal in thin magnetic films with uniaxial anisotropy is known to occur by domain wall motion if the externally applied field is only slightly above the wall motion threshold field. For sufficiently large fields applied at an angle with respect to the easy axis, reversal takes place by coherent rotation. However, the reversal process observed over a substantial field range immediately above the rotational threshold is neither simple wall motion nor simple coherent rotation. Four different models are reviewed which have been proposed for this third type of flux reversal process. These models were developed by Stein, Harte, Vinogradov, and Fuchikami, and it is concluded that no single model offers a complete description of this third process.
Keywords :
Magnetic film switching; Magnetization reversal; Anisotropic magnetoresistance; Magnetic domain walls; Magnetic field measurement; Magnetic fields; Magnetic films; Magnetic flux; Magnetization; Telephony; Torque; Transistors;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1968.1066185