Title :
Dependence of interconnection delays on driving mechanism for GaAs-based VLSI
Author :
Goel, Ashok Kumar
Author_Institution :
Michigan Technological University, Department of Electrical Engineering, Houghton, USA
Abstract :
The dependence of interconnection delays on several different methods has been examined for GaAs-based VLSI.
Keywords :
III-V semiconductors; VLSI; delays; gallium arsenide; metallisation; monolithic integrated circuits; Al-GaAs; GaAs-based VLSI; III-V semiconductors; WSi2-GaAs; cascaded inverters; driving mechanism; interconnection delays; minimum-size inverters; monolithic IC; optimum-size invertors; single MESFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870745
