Title :
GaInAs/InP waveguide multiple-quantum-well optical modulator with 9 dB on/off ratio
Author :
Wakita, Ken ; Nojima, S. ; Nakashima, Kazuto ; Kawaguchi, Yuki
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
Clear excitonic peak wavelength shifts are obtained with an applied electric field and large on/off ratio optical modulation of long-wavelength light propagating along the plane of GaInAs/InP multiple-quantum-well (MQW) structures grown by metalorganic molecular beam epitaxy (MOMBE). These waveguide MQW optical modulators have a modulation on/off ratio of 8:1 (9 dB) at a driving voltage as low as 5 V operating at a wavelength of 1.55 ¿m. This measurement is the first step towards faster and higher extinction ratio devices.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical communication equipment; optical modulation; optical waveguide components; 1.55 micron; 5 V; 9 dB on/off ratio; GaInAs-InP; III-V semiconductor; MBE; MQW; applied electric field; excitonic peak wavelength shifts; long-wavelength light; metalorganic molecular beam epitaxy; multiple-quantum-well; optical communication equipment; optical modulator; waveguide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870746
