DocumentCode
1036718
Title
GaInAs/InP waveguide multiple-quantum-well optical modulator with 9 dB on/off ratio
Author
Wakita, Ken ; Nojima, S. ; Nakashima, Kazuto ; Kawaguchi, Yuki
Author_Institution
NTT Electrical Communications Laboratories, Atsugi, Japan
Volume
23
Issue
20
fYear
1987
Firstpage
1067
Lastpage
1069
Abstract
Clear excitonic peak wavelength shifts are obtained with an applied electric field and large on/off ratio optical modulation of long-wavelength light propagating along the plane of GaInAs/InP multiple-quantum-well (MQW) structures grown by metalorganic molecular beam epitaxy (MOMBE). These waveguide MQW optical modulators have a modulation on/off ratio of 8:1 (9 dB) at a driving voltage as low as 5 V operating at a wavelength of 1.55 ¿m. This measurement is the first step towards faster and higher extinction ratio devices.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical communication equipment; optical modulation; optical waveguide components; 1.55 micron; 5 V; 9 dB on/off ratio; GaInAs-InP; III-V semiconductor; MBE; MQW; applied electric field; excitonic peak wavelength shifts; long-wavelength light; metalorganic molecular beam epitaxy; multiple-quantum-well; optical communication equipment; optical modulator; waveguide;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870746
Filename
4258983
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