Title :
Analysis of M-R elements for 108 bit/cm2 arrays
Author :
Pohm, A.V. ; Comstock, C.S. ; Daughton, J.M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA
fDate :
9/1/1989 12:00:00 AM
Abstract :
Magnetoresistive memory elements made from 100-Å thick, 65% Ni, 15% Fe, 20% Co layers separated by a 40-Å nonmagnetic layer have been analyzed theoretically. The analysis shows that with lithography capable of a minimum feature size of 0.4 μm and with the ability to deposit nonconducting magnetic keepers, memory arrays with a density of 108 bit/cm2 can be achieved. Analysis shows that such elements can lead to random access memories with an access time of 5 μs. In the case of plated conducting keepers, the element density is slightly diminished
Keywords :
magnetic film stores; magnetoresistance; 0.4 micron; 100 A; 40 A; 5 mus; M-R elements; Ni-Fe-Co; RAM; access time; element density; feature size; lithography; magnetoresistive memory elements; memory arrays; multimegabit memories; nonconducting magnetic keepers; plated conducting keepers; random access memories; Iron; Lithography; Magnetic analysis; Magnetic separation; Magnetoresistance; Random access memory;
Journal_Title :
Magnetics, IEEE Transactions on
