Title :
GaInAs PIN photodiodes grown on silicon substrates for 1.55 μm detection
Author :
Hodson, P.D. ; Bradley, R.R. ; Riffat, J.R. ; Joyce, T.B. ; Wallis, R.H.
Author_Institution :
Plessey Research (Caswell) Limited, Allen Clark Research Centre, Towcester, UK
Abstract :
We report the first GalnAs PIN photodiodes to be fabricated on silicon substrates. Superlattice buffer layers were used to accommodate the lattice parameter mismatch. Reverse leakage currents of ˜70nA at - 1 V bias were measured for 105 μm-diameter mesa diodes. The uncoated external quantum efficiency at a wavelength of 1.55 μm was 30%.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; photodetectors; photodiodes; semiconductor growth; vapour phase epitaxial growth; 1.55 micron; 105 micron; 30 percent; GaInAs-Si; III-V semiconductors; MOCVD; PIN photodiodes; lattice parameter mismatch; mesa diodes; micron wavelength detectors; optical fibre communication; p-i-n device; superlattice buffer layers; uncoated external quantum efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870764
