Title :
High-performance WN-gate MISFETs fabricated from MOVPE wafers
Author :
Wolny, M. ; Aguila, T. ; Deconinck, P. ; Moroni, D. ; Andre, J.P.
Author_Institution :
LEP (Laboratoires d´´Electronique et de Physique appliquée), Limeil-Brévannes, France
Abstract :
WN-gate heterojunction MISFETs with an AlGaAs layer as insulator have been fabricated on MOVPE wafers; they exhibit high transconductance (up to 460 mS/mm) and high Vt uniformity.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; metal-insulator-semiconductor devices; vapour phase epitaxial growth; AlGaAs-GaAs; MOVPE wafers; WN; WN-gate MISFETs; high transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870786
