• DocumentCode
    1037122
  • Title

    High-performance WN-gate MISFETs fabricated from MOVPE wafers

  • Author

    Wolny, M. ; Aguila, T. ; Deconinck, P. ; Moroni, D. ; Andre, J.P.

  • Author_Institution
    LEP (Laboratoires d´´Electronique et de Physique appliquée), Limeil-Brévannes, France
  • Volume
    23
  • Issue
    21
  • fYear
    1987
  • Firstpage
    1127
  • Lastpage
    1128
  • Abstract
    WN-gate heterojunction MISFETs with an AlGaAs layer as insulator have been fabricated on MOVPE wafers; they exhibit high transconductance (up to 460 mS/mm) and high Vt uniformity.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; metal-insulator-semiconductor devices; vapour phase epitaxial growth; AlGaAs-GaAs; MOVPE wafers; WN; WN-gate MISFETs; high transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870786
  • Filename
    4259024
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1037122