Title :
New mechanism for subsurface imaging in silicon
Author :
Sheard, Steve John ; Somekh, M.G.
Author_Institution :
University College London, Department of Electrical & Electronic Engineering, London, UK
Abstract :
We report the use of photothermal radiometric microscopy to image through silicon wafers. Experimental results are presented which show that the signal obtained decreases as the normal emissivity of the material on the back surface increases. The theory for the emissivity of partially transparent objects has been extended to explain these findings. We conclude that the contrast is due to photon-induced switching of the infra-red transmission coefficient of the silicon.
Keywords :
elemental semiconductors; optical microscopy; photothermal effects; radiometry; silicon; Si; infra-red transmission coefficient; partially transparent objects; photon-induced switching; photothermal radiometric microscopy; subsurface imaging;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870791
