• DocumentCode
    1037218
  • Title

    High-performance millimetre-wave GaAs power MESFET prepared by gas source molecular beam epitaxy

  • Author

    Shih, H.D. ; Kim, Bumki ; Wurtele, M.

  • Author_Institution
    Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
  • Volume
    23
  • Issue
    21
  • fYear
    1987
  • Firstpage
    1141
  • Lastpage
    1142
  • Abstract
    A state-of-the-art GaAs power MESFET prepared by gas source molecular beam epitaxy is described. The device showed DC transconductance of 180mS/mm and generated power density of 0¿6W/mm at 35 GHz, with 5dB gain and 28% power-added efficiency.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; power transistors; solid-state microwave circuits; 0.6 W/mm; 180 mS/mm; 35 GHz; 5 dB; DC transconductance; GaAs; gas source molecular beam epitaxy; millimetre-wave GaAs power MESFET; power density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870795
  • Filename
    4259033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1037218