Total active area silicon photodiode array

A novel approach is described for fabricating high resolution silicon photodiode arrays whereby virtually none of the irradiated array area is lost for interelement isolation or lead contacting requirements. Element isolation is achieved by biasing a p-v-n diode so that the depletion layer reaches a pattern of grooves etched into the side opposite the radiation. Experiments illustrating the concept feasibility on a two element array are presented as well as preliminary results on a 7×7 array having elements on centers separated by 0.013 cm.