DocumentCode :
1037313
Title :
A GaAs avalanche diode analysis and an approximate indirect measurement of hole saturation velocity
Author :
Kim, Chung K.
Author_Institution :
Raytheon Co., Murray Hill, N.J.
Volume :
16
Issue :
11
fYear :
1969
fDate :
11/1/1969 12:00:00 AM
Firstpage :
917
Lastpage :
922
Abstract :
GaAs avalanche diodes are observed to operate at frequencies considerably lower than those of Si or Ge diodes with similar doping profiles and dc characteristics. This observed behavior and the analysis shown in this paper enable us to evaluate an approximate hole saturation velocity in GaAs. Small signal impedances and Q\´s of GaAs avalanche diodes with breakdown voltages of 17, 36, and 58 are calculated based on the approximated hole saturation velocity of 
cm/s. The model assumes an abrupt p+-n junction, e.g., zinc diffusion on n-type material, and a realistic electric field in the space-charge region.
cm/s. The model assumes an abrupt p+-n junction, e.g., zinc diffusion on n-type material, and a realistic electric field in the space-charge region.Keywords :
Charge carrier processes; Diodes; Doping profiles; Electron mobility; Frequency; Gallium arsenide; Impedance; Ionization; Velocity measurement; Zinc;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1969.16881
Filename :
1475923
Link To Document :
