High-temperature metallisation systems for transient annealing GaAs

The letter reports the results of rapid thermal annealing of W, Ta and TaSix on GaAs. The results indicate that the rapid thermal annealing process results in contact stability to higher temperatures than is seen in conventional annealing. Furthermore, the stability of tantalum is greatly improved when silicon is added to the system, forming a TaSix contact. The preliminary results of TaSix on In-doped GaAs indicate that the process of Ga and/or As outdiffusion is inhibited up to a temperature of 1050°C.