Measurements of the frequency dependence of the dielectric conductivity, Hall mobility, and thermal EMF as a function of temperature on polycrystalline Ni
0.6Fe
0.4Fe
2O
4indicate that these data can be interpreted in terms of the band model. Previous analyses of the semiconductor properties of ferrites according to the hopping model assume that the number of carriers

is identical with the concentration of divalent iron ions. Hall measurements indicate that this is not the case here, and that

is best described by the equation
![n^{2} = (N_{D}-n)N_{0}[frac{m*}{m}]^{3/2} g^{-1} \\exp (frac{-E_{D}}{kT})](/images/tex/8485.gif)
. Assigning a value of 2 to

is 9.3, and E
Dis 0.034 eV.