Title :
Optoelectronic millimetre-wave switching using a finline-on-silicon substrate
Author_Institution :
Technische Universitÿt Hamburg-Harburg, Arbeitsbereich Hochfrequenztechnik, Hamburg, West Germany
Abstract :
A finline-on-silicon substrate has been realised showing small insertion loss. Illuminating the slot region by an infra-red-emitting diode, considerable attenuation has been achieved. This demonstrates the high optoelectronic sensitivity of a finline structure, which is due to the high field concentration in the slot. Experimental results in the 26.5-40 GHz range are given.
Keywords :
fin lines; integrated optoelectronics; microwave devices; substrates; switches; waveguide components; 26.5 to 40 GHz; EHF; Si; attenuation; finline-on-Si substrate; high field concentration; infrared-emitting diode; optoelectronic MM-wave switching; optoelectronic sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870805
