Complementary MOS—Bipolar transistor structure

Bipolar transistors can be used to increase the driving capabilities of complementary MOS transistors while retaining the low power dissipation feature. The fabrication of n-p-n bipolar transistors is compatible with the fabrication of the complementary MOS transistors in a monolithic structure. Common collector n-p-n transistors can be fabricated using a diffused n⁺source-drain region as emitter, a diffused p^-isolation region as base and an n^-substrate as collector with a hfegreater than 100. Lateral n-p-n transistors can be fabricated using a diffused n⁺source-drain region as emitter and collector, and p^-isolation region as base with a hfegreater than 10.