Title :
CMOS circuits made in thin SIMOX films
Author :
Colinge, J.P. ; Kamins, Theodore I.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, USA
Abstract :
MOS transistors and ring oscillators have been fabricated in thin (100 nm) SIMOX films. As has been theoretically predicted, no ´kink´ effect is observed in the n-channel devices, the inverse subthreshold slope is lower than in bulk devices (70mV/decade against HOmV/decade in bulk), and the dependence of threshold voltage on gate length is much less pronounced than in the bulk.
Keywords :
CMOS integrated circuits; oscillators; thin film transistors; CMOS circuits; MOS transistors; SOI MOSFET; n-channel devices; ring oscillators; thin SIMOX films;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870810
