• DocumentCode
    1037378
  • Title

    Infrared detection properties of Zn-doped Si p-i-n diodes

  • Author

    Streetman, B.G.

  • Volume
    16
  • Issue
    11
  • fYear
    1969
  • fDate
    11/1/1969 12:00:00 AM
  • Firstpage
    963
  • Lastpage
    964
  • Abstract
    Double-injection p-i-n diodes containing appropriate trapping centers exhibit extremely light sensitive space charge limited current characteristics. Small variations in the i-region space charge induced by low light levels results in lalge changes in the forward current. The detectivity D* of typical Zn-doped devices is approximately 1013.
  • Keywords
    Electron traps; Forward contracts; Infrared detectors; Lighting; Optical devices; Optical sensors; P-i-n diodes; PIN photodiodes; Space charge; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1969.16888
  • Filename
    1475930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1037378