DocumentCode :
1037378
Title :
Infrared detection properties of Zn-doped Si p-i-n diodes
Author :
Streetman, B.G.
Volume :
16
Issue :
11
fYear :
1969
fDate :
11/1/1969 12:00:00 AM
Firstpage :
963
Lastpage :
964
Abstract :
Double-injection p-i-n diodes containing appropriate trapping centers exhibit extremely light sensitive space charge limited current characteristics. Small variations in the i-region space charge induced by low light levels results in lalge changes in the forward current. The detectivity D* of typical Zn-doped devices is approximately 1013.
Keywords :
Electron traps; Forward contracts; Infrared detectors; Lighting; Optical devices; Optical sensors; P-i-n diodes; PIN photodiodes; Space charge; Zinc;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1969.16888
Filename :
1475930
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1037378
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